Numerical Study of a Highly Scaled Bulk MOSFET With Block Oxide and Source/Drain-Tied Structure

摘要

In this paper, we present a highly scaled bulk metal–oxide–semiconductor field-effect transistor with block oxide (BO) and source/drain (S/D)-tied structure that meets the International Technology Roadmap for Semiconductors requirements for high-performance devices. This new device requires only a simple BO fabrication process using SiGe–Si epitaxial growth with selective SiGe removal and requires no additional lithography masks. This proposed BO fabrication process is simple due to it being controllable, repeatable, and fully compatible with standard complementary metal–oxide–semiconductor technology. According to 3-D simulations, our proposed structure not only exhibits its structural advantages to overcome scaling obstacles but also extends the use of planar bulk technology to the decananometer regime.