Controlled blocking current generation device for power semiconductor switch e.g. MOSFET switch or IGBT switch, using depletion-p-channel MOSFET as blocking current source

摘要

The controlled blocking current generation device has a further switch (4,4') with a depletion-p-channel MOSFET (4') acting as a blocking current source connected in circuit with the main power semiconductor switch in an output stage containing a primary winding of a transformer. The amplitude of the blocking current provided by the depletion-p-channel MOSFET is determined by the size of a zone with the same conductivity as the body zone of the transistor.