Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

摘要

Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-$muhbox{m}$ CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base–collector junction. Transistors with $BV_{rm CEO} = hbox{12.6} hbox{V}$, $f_{T} cdot BV_{rm CEO} = hbox{160} hbox{GHz}cdot hbox{V}$ , and $beta cdot VA = hbox{28},hbox{700} hbox{V}$ are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.