A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser

摘要

A GaAlAs double-heterostructure laser has been monolithically integrated with a heterojunction bipolar transistor on a GaAs substrate. Integration is achieved by means of a mutually compatible structure formed by Be ion implantation. Typical pulsed threshold currents for the laser are 60 mA, and the transistors have a typical common-emitter current gain of 900.