A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

摘要

A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (f_T) of 21.4 GHz, the maximum frequency of oscillations (f_(max)) of 32.6 GHz and the collector-emitter breakdown voltage (BV_(CEO)) of 5.6 V, which are the highest f_T and the highest f_TBV_(CEO) product among the lateral bipolar transistors (LBTs).