A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA

摘要

This paper presents a 700-V high-voltage laterally diffused metal-oxide–semiconductor (LDMOS) field-effect transistor with a p-body_Extension reduce surface field (RESURF) structure. Experimental results demonstrate that the low ON resistance and breakdown voltage (BV)-$R_{rm{ON},sp}$ figure of merit approach the ideal Baliga's power law, in addition, breaks the quasi-saturation limitation with enhanced device safe operating area (SOA). The optimal charge balance and geometrical design to achieve the lowest specific ON resistance $(R_{rm{ON},sp})$ with the desired maximum high BV are displayed and discussed by simulations and experimental results. The 2-D simulations confirmed that, compared with conventional triple-RESURF structures, the presented device provides a fourfold reduction in the surface electric field on the source side and a 32% improvement in blocking voltage. The specific ON resistance demonstrates superior 40% lower performance than published Junction Isolation LDMOS device families. In addition, its twofold increase in SOA extension can improve the performance of circuit designs for switching power supply applications.