Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

摘要

The advantages of GaN-based light-emitting diodes with polarization-reduced chirped multiquantum barrier (PR-CMQB) as electron blocking layer (EBL) are investigated numerically and experimentally. Both simulation and experiment results indicate that the LED with PR-CMQB possesses higher internal quantum efficiency and light output power as compared with its counterparts with either conventional single AlGaN EBL or CMQB. These improvements are mainly attributed to the suppression of electron leakage and the enhancement of hole injection efficiency. Furthermore, the efficiency droop is markedly reduced when the PR-CMQB is employed.