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Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes

机译：MG掺杂在InGaN / GaN的发光二极管电气性能屏障中的影响

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Binbin Zhu; Zi-Hui Zhang; Swee Tiam Tan; Shunpeng Lu; Yiping Zhang; Xuejun Kang; Ning Wang; Namig Hasanov; Hilmi Volkan Demir;
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1. Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes [J] . Binbin Zhu, Zi-Hui Zhang, Swee Tiam Tan, Physica, E. Low-dimensional systems & nanostructures . 2018,第期

机译：MG掺杂在Ingan / GaN的发光二极管电气性能屏障的影响
2. Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers [J] . Cai Jin-Xin, Sun Hui-Qing, Zheng Huan, 中国物理：英文版 . 2014,第005期

机译：具有InGaN / GaN超晶格势垒的GaN基发光二极管的增强性能
3. Electrical characteristics of Cu-doped In_2O_3/Sb-doped SnO_2 ohmic contacts for high-performance GaN-based light-emitting diodes [J] . Joon-Ho Oh, Tae-Yeon Seong, H. G. Hong, Journal of electroceramics . 2011,第3a4期

机译：高性能GaN基发光二极管的Cu掺杂In_2O_3 / Sb掺杂SnO_2欧姆接触的电学特性
4. Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer [C] . Pramila Mahala, Amit K. Goyal, Sumitra Singh, International communications conference . 2019

机译：通过设计电子阻挡层减少GaN / IngaN多量子孔发光二极管的Si-掺杂屏障模型的效率下垂
5. Performance Enhancement of Organic Light-Emitting Diodes with an Inorganically Doped Hole Transport Layer. [D] . Li, Xiaomeng. 2016

机译：具有无机掺杂的空穴传输层的有机发光二极管的性能增强。
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes [O] . Yiping Zhang, Zi-Hui Zhang, Swee Tiam Tan, 2017

机译：in Ingan / GaN的发光二极管P型耗竭掺杂的研究

Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes

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