Design of U-Shape Channel Tunnel FETs With SiGe Source Regions

摘要

In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D technology computer aided design simulation. The enlarged tunneling area and enhanced tunneling rate dramatically increase the tunneling current when the device is turned on. Meanwhile, the off-leakage current of UTFET is suppressed because of the extended physical channel length. The on-state tunneling current of UTFET can be further improved by introducing an $n^{+}$-doped Si delta layer under the source region. The inserted delta layer significantly shortens the band-to-band tunneling path, enlarges tunneling area, and thus enhances the tunneling rate of this device. The average value of the subthreshold swing (SS) of the optimized UTFET is 58 mV/dec when $V_{rm{GS}}$ is varied from 0 to 0.46 V. Using the SiGe-source UTFET structure with a delta layer, the merits of low leakage current, high drive current, and ultralow SS can be realized simultaneously.