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Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

机译:新型用于工业软开关电源的10 kV 2 A SiC p-i-n二极管的设计与表征

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摘要

10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter.
机译:已经设计和制造了10 kV,2 A SiC p-i-n二极管。该器件具有出色的正向特性稳定性和鲁棒的结端接点,雪崩能力为1J。已对制成的二极管进行了动态动态导通状态电压,反向恢复行为,双极稳定性和雪崩能力的电气评估。使用新开发的10 kV p-i-n二极管,在多千瓦高压,高频dc / dc软开关转换器中,已证明损耗降低了60%以上。

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