Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

摘要

Defect less semiconductor-on-insulator (-OI) by a cost-effective and low-temperature process is strongly needed for monolithic 3-D integration. Toward this, in this paper, we present a cost-effective fabrication of the indium gallium arsenide-OI structure featuring the direct wafer bonding (DWB) and epitaxial lift-off (ELO) techniques as well as the reuse of the indium phosphide donor wafer. We systematically investigated the effects of the prepatterning of the III–V layer before DWB and surface reforming (hydrophilic) to speed up the ELO process for a fast and high-throughput process, which is essential for cost reduction. This method provides an excellent crystal quality of InGaAs on Si. Crystal quality of the film was evaluated using Raman spectra, and transmission electron microscope. Finally, we achieved good electrical properties of InGaAs-OI metal-oxide-semiconductor field-effect-transistors fabricated through the proposed DWB and ELO.