The Improvement of Subthreshold Slope and Transconductance of p-Type Bulk Si Field-Effect Transistors by Solid-Source Doping

摘要

As dimension of bulk Si field-effect transistors scales down, novel techniques for impurity profile design at channel area are required because suppression of short-channel effects and improvement of on-state current is tradeoff in conventional ion implantation process. In this paper, we demonstrate p-type bulk Si fin field-effect transistors by using solid-source doping for better impurity profile in fin to weaken the tradeoff between suppression of short-channel effects and improvement of on-state current. In this paper, impurity profiles in fin with two different kinds of anneal conditions after fin revelation (1000 °C 30 s and 1050 °C spike) are analyzed, and the better impurity profile at channel area is designed by 1000 °C 30-s anneal for better electrical characteristics. The anneal condition with the better impurity profile in fin showsmobility improvement at long gate length ( 1~mu text{m}1 μm ) and short gate lengths (60, 70, and 80 nm); subthreshold slope and transconductance are improved at the same time. With those results, we conclude that a fabrication process flow of p-type bulk Si fin field-effect transistors to weaken the tradeoff between suppression of short-channel effects and improvement of on-state current is established with 1000 °C 30-s anneal after fin revelation by using solid-source doping. At the same time, electrical characteristics variation is also suppressed in the case of 1000 °C 30-s anneal.