机译:La掺杂ZrON作为界面钝化层的GaAs MOS电容器的电学和界面性质
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;
Department ofElectrical and Electronic Engineering, The University of Hong Kong, Hong Kong;
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong;
Gallium arsenide; Logic gates; High-k dielectric materials; Dielectrics; MOS capacitors; Substrates;
机译:通过氟化硅钝化层改善具有ZrON / TaON多层复合栅极电介质的Ge MOS电容器的界面和电学性能
机译:以LaON / TiON多层复合栅电介质和LaON作为界面钝化层的GaAs MOS电容器的界面和电学性能的改善
机译:以ZrA1ON为界面钝化层的GaAs金属氧化物半导体电容器的界面和电学性质
机译:Zrlaon钝化层和氟掺入的GE MOS电容的界面和电性能
机译:对具有薄界面钝化层的III-V衬底上基于二氧化ha的MOSCAP和MOSFET的研究
机译:以La2O3中间层的厚度为特征的HfO2 / Ge MIS电容器的电学性质和界面问题。
机译:用HfTiON作为栅极电介质和TaON作为钝化中间层的Gaas金属 - 氧化物半导体电容器的界面和电学性能得到改善