机译:通过氟化硅钝化层改善具有ZrON / TaON多层复合栅极电介质的Ge MOS电容器的界面和电学性能
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China,School of Information and Engineering, Hubei University for Nationalities, Enshi, Hubei, China;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Pokfulam, Hong Kong;
Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong;
机译:以LaON / TiON多层复合栅电介质和LaON作为界面钝化层的GaAs MOS电容器的界面和电学性能的改善
机译:具有TiON / TaON多层复合栅电介质的InGaAs金属氧化物半导体电容器的界面和电学性质
机译:以HfTiON为栅介电层和TaON为钝化中间层的GaAs金属氧化物半导体电容器的界面和电学性能得到改善
机译:Zrlaon钝化层和氟掺入的GE MOS电容的界面和电性能
机译:了解电容器应用的多层聚合物膜的损失机制和增强介电性能
机译:具有AlN界面层的单层MoS2 MOSFET的改进的栅介电沉积和增强的电稳定性
机译:具有TiON / TaON多层复合栅电介质的InGaAs金属氧化物半导体电容器的界面和电学性质