Method to control interfacial properties for capacitors using a metal flash layer

摘要

A capacitor can be formed by depositing a metal flash layer (e.g., Ti) over a substrate (e.g., silicon). A dielectric layer (e.g., a high K dielectric) is formed over the metal flash layer. A conductive layer is formed over the dielectric layer such that the conductive layer is capacitively coupled to the substrate and/or the metal flash layer. The device can be annealed such that the metal flash layer changes state and such that a capacitance between the conductive layer and the substrate and/or the metal flash layer is increased.