OPTICAL-MODE-CONFINED AND ELECTRICAL-CURRENT-CONFINED SEMICONDUCTOR LIGHT SOURCES UTILIZING RESISTIVE INTERFACIAL LAYERS

摘要

A semiconductor device comprises: a first region (180) having a semiconductor interface between a first semiconductor (130) and a second semiconductor (150), and a second region (170), laterally adjoining the first region (180). The first semiconductor (130) is characterized by Fermi level pinning within an energy gap of the first semiconductor material (130) and further characterized by a first conductivity level in the vicinity of the interface that substantially blocks electrical current flow through the semiconductor interface. The second region (170) includes a semiconductor characterized by a second conductivity level substantially higher than the first conductivity level such that the second region (170) is adapted to enable electrical current to pass through the second region (170), thus defining a current injection path in the device.