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VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING AN INTERFACIAL OXYGEN SOURCE LAYER
VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING AN INTERFACIAL OXYGEN SOURCE LAYER
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机译:包含界面氧源层的空变调制的导电氧化电阻RAM设备
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摘要
A vacancy-modulated conductive oxide (VMCO) resistive random access memory (ReRAM) device includes at least one interfacial layer between a semiconductor portion and a titanium oxide portion of a resistive memory element. The at least one interfacial layer includes an oxygen reservoir that can store oxygen atoms during operation of the resistive memory element. The at least one interfacial layer can include an interfacial metal oxide layer, a metal layer, and optionally, a ruthenium layer.
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