Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO₂-Based Oxide RRAM and Conductive-Bridge RAM Devices

摘要

In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO-based resistive random access memory (RRAM) devices, namely, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices after high-temperature annealing in vacuum, which is attributed to a considerable amount of oxygen vacancies created in the switching layer. However, the substantial improvement in device performance, such as stable switching, high switching cycles, decreased set/reset voltages, and near-100% device yield, were obtained in the CBRAM devices during the post-HfO deposition annealing in vacuum.