TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation

摘要

The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive passivation layer on top is presented in this work. The junction termination featuring the variation of lateral doping (VLD) is revisited for such devices by focusing on the interaction with the passivation material on top. To this purpose, an ideal dielectric (SiO₂) is compared with differently-doped diamond-like carbon (DLC) by incorporating the passivation layer in the TCAD setup. The simulation analysis rigorously explains the impact of the DLC material on the layout reoptimization of a specific reference diode.