Utilizing ISE-TCAD Software to Simulate Power MOSFET Devices Operating at Cryogenic Temperatures

摘要

There has been research in the past on electronics operation at cryogenic temperatures. However here we present research by the use of simulation tools for the study power MOSFETs operating at cryogenic temperatures. By the use of integrated Systems Engineering Technical computer Aided Design software (ISE-TCAD). POWER MOSFETs were modeled and simulated under room temperature (300 K) and also Liquid Nitrogen Temperature (77 K). Power MOSFETs make an almost ideal candidate for operating at cryogenic conditions because of their high switching speeds, large breakdown voltage, and increase performance in on resistance. It is shown that. for this device, on resistance and transconductance increase by three times as does epitaxial layer mobility. However breakdown voltage and threshold voltage deteriorates slightly. First a computer-generated model is developed and a variety of parameter extractions are performed. Then, particular regions of the power MOSFET are modified and reevaluated for a comparison of parameter analysis. Lastly, an attempt to fabricate the device was performed at the University of Central Florida.