功率MOSFET器件安全工作区的研究

摘要

功率金属氧化物半导体场效应晶体管(MOSFET)的热不稳定现象,限制了MOSFET的安全工作区.为得到符合实际的安全工作区,建立了一种分析模型,综合考虑了电流温度系数、热阻等因素,分析解释热不稳定产生条件,通过与实验数据的对比,证明了模型的正确性,得到了更符合实际的安全工作区.%The thermal instability of power metal-oxide-semiconductor field effect transistor (MOSFET) limits the safe operation area of MOSFET. An analytical model is developed to explain this type of thermal instability. A thermal instability model based on the positive temperature coefficient of the leakage current and thermal resistance can predict the occurrence of thermal instability. Through the comparison of experimental data, the correctness of the model is verified and a more realistic safe operation area is obtained.