Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates

摘要

In this article, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-gallium nitride (GaN) gate high electron mobility transistors (HEMTs), which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the I-ON/I-OFF ratios by a factor of 50, increase the V-TH by 0.30 V and reduce the OFF-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 degrees C, gate breakdown voltage (BV) holds at 12.1 V. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the I-ON/I-OFF ratio and gate BV of normally-OFF GaN HEMTs.