Bonding Pad Over Active Area Layout for Lateral AlGaN/GaN Power HEMTs: A Critical View

摘要

This paper investigates the advantages and disadvantages of bonding pad over active area (BPOA) layout over a conventional layout for lateral AlGaN/GaN HEMTs designed for use in power applications. Extensive analysis of the performance of a BPOA device, both experimentally and supported by 3-D TCAD model simulations, reveals that while it can offer a higher current capability per unit area, it can lead to other disadvantages compared to a conventional design when considering reliability aspects.