机译:关于“在独立式GaN衬底上提高GaN器件的可靠性”的勘误表[8月18日3379-3387]
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
机译:基于块状GaN衬底的垂直GaN器件的可靠性研究
机译:通过衬底偏角控制改善垂直GaN-on-GaN电源开关器件的晶圆级施主均匀性
机译:在用于大功率器件的独立式金刚石基板上生长的高度c轴取向的GaN膜
机译:独立式GaN衬底上的GaN光学器件
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:用HVPE使用组合缓冲层在蓝宝石上制造2英寸独立的GaN衬底
机译:非极性垂直GaN-On-GaN P-N二极管在自由站立$(10 bar {1} 0)$ M平面GAN基板上生长
机译:alGaBN / GaN / si mOsFET的器件性能和可靠性改进。