50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles

摘要

Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double -polysilicon self-aligned structure using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal DC characteristics, with breakdown voltages adequate for most digital applications. The results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought.