Roles of electron trapping and interface state generation on gate-induced drain leakage current in p-MOSFETs

摘要

The roles of electron trapping and of acceptor-type interface state generation ( Delta D/sub it/) in the off-state gate-induced drain leakage (GIDL) current in p-MOSFETs are studied. It is found that both trapped electrons and negatively charged acceptor-type interface states reduce the GIDL current at the high-surface-field region, in which GIDL is still governed by the band-to-band tunneling process. However, the neutral acceptor-type Delta D/sub it/ increases the GIDL current significantly at the low-surface-field region.