An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

摘要

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFETs) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods to reduce the gate current are discussed.