Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

摘要

A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using point-contact probes. The measurement setup for in-situ operation and typical transistor characteristics are presented. Parameters are extracted which relate to minority and majority carriers, buried oxide, and the Si-SiO/sub 2/ interface.