Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs

摘要

Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub T/ rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFETs. This boron redistribution originates from the As implantation damage in the source and drain regions.