A novel self-aligned TiN formation by N/sub 2//sup +/ implantation during two-step annealing Ti-salicidation for submicrometer CMOS technology application

摘要

A new technology of self-aligned TiN/TiSi/sub 2/ formation using N/sub 2//sup +/ implantation during two-step annealing Ti-salicidation process has been developed. The formation of TiN was confirmed by RBS analysis. The leakage currents of n/sup +//p junction diodes fabricated using this technology were measured to investigate the phenomena of Al spiking into Si-substrate. The measured reverse-bias leakage current of diode per unit junction area with Al/TiN/TiSi/sub 2/ contact is 1.2 nA/cm/sup 2/ at -5 V, which is less than all of reported data. Also it can sustain the annealing process for 30 min at 500/spl deg/C. Thus, TiN formed with this technology process is suggested as a very effective barrier layer between TiSi/sub 2/ and Al for submicron CMOS technology applications.