Self-aligned tin formation by N.sub.2.sup.+ implantation during two-step annealing Ti-salicidation

摘要

A self-aligned TiN/TiSi.sub.2 formation using N.sub.2.sup.+ implantation during a two-step annealing Ti-salicidation process is provided. The leakage currents of n.sup.+ /p junction diodes fabricated using this technology were measured to investigate the phenomena of Al spiking into Si-substrate. The measured reverse-bias leakage current of diode per unit junction area with Al/TiN/TiSi.sub.2 contact is 1.2 nA/cm. sup.2 at -5 Volts, which is less than all of reported data. Also it can sustain the annealing process for 30 min at 500° C. Thus, TiN formed with this technology process provides an effective barrier layer between TiSi.sub.2 and Al for submicron CMOS technology applications.