METHOD FOR FORMATION OF AREAS IMPLANTED BY SELF-ALIGNED IONS WITH SUPERPOSED INSULATING LAYER PARTS

摘要

METHOD FOR MAKING AN IMPLANTED SURFACE REGION, THE EDGE OF WHICH IS ALIGNED IN RELATION TO AN EDGE OF A SUPERPOSED INSULATING LAYER PART. THE METHOD COMPRISES THE STEPS OF RECOVERING A SEMICONDUCTOR SURFACE OF AN INSULATING LAYER 12, COVERING THE INSULATING LAYER 12 OF THE FIRST 14 AND SECOND 16 LAYERS OF PHOTOSENSITIVE RESIN, ONE OF SAID LAIDERS BEING CONSISTED OF A POSITIVE PHOTOSENSITIVE RESIN AND THE OTHER BY A NEGATIVE PHOTOSENSITIVE RESIN, THE PHOTOSENSITIVE RESIN LAYERS ARE BOTH EXPOSED THROUGH A MASK 18 AND THE DISSOLVED PART OF THE SECOND SUPERIOR PHOTOSENSITIVE RESIN LAYER 16 IS REMOVED. IONS ARE IMPLANTED IN THE SEMICONDUCTOR SURFACE USING THE SECOND RESISTANT PHOTOSENSITIVE RESIN LAYER AND THE UNDERLYING LAYER PARTS AS A MASK FOR FORMING IMPLANTED REGIONS 20. THEN THE DISSOLVED PART OF THE FIRST PHOTOSENSITIVE RESIN LAYER 14 AND THE PART OF THE SECOND PHOTOSENSITIVE RESIN LAYER 16 ON THIS ARE REMOVED. WHILE USING THE RESISTANT PART OF THE FIRST PHOTOSENSITIVE RESIN LAYER 14 AS A MASK, THE DISCOVERY PART OF THE INSULATING LAYER 12 IS REMOVED BY STRIPPING, LEAVING EXIST PARTS OF THE INSULATING LAYER 12 IN A SELF-ALIGNED MANNER IN RELATION TO THE IMPLANTED REGIONS 20. / P P APPLICATION TO THE MANUFACTURE OF TRANSISTORS MOS. / P