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Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire.

机译：锡注入蓝宝石诱导非晶层的形成和退火行为。

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The formation and annealing behavior of an amorphous layer produced by tin implantation into sapphire has been studied. Tin ions with 180 keV energy were implanted into (alpha)-Al(sub 2)O(sub 3) at 300 K with fluences ranging from 10(sup 15) to 10(sup 17) ...

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作者
L. J. Romana P. S. Sklad C. W. White A. Choudhury L. L. Horton;
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年度 1991
页码 1-20
总页数 20
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Amorphous State; Annealing; Argon; Crystals; EDB/360202; EDB/360206; EDB/656003; Electron Microscopy; Hydrogen; Ion Implantation; Meetings; Microstructure; Physical Radiation Effects; Recrystallization; Sapphire; Stability; Tin Ions;

机译：非晶态;退火;氩;晶体; EDB / 360202; EDB / 360206; EDB / 656003;电子显微镜;氢;离子注入;会议;微观结构;物理辐射效应;重结晶;蓝宝石;稳定性;锡离子;

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机译：正电子ni没光谱显示的氟注入甘层的缺陷形成和退火行为
2. Influence of annealing on mechanics behaviors of oxygen-implanted layer on Ti6Al4V by plasma-based ion implantation [J] . Jinlong L., Mingren S., Xinxin M., Surface & Coatings Technology . 2013,第Suppla1期

机译：退火对基于等离子体的离子注入Ti6Al4V上氧注入层力学行为的影响
3. Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy [J] . W. Anwand, S.Z. Xiong, C.Y. Wu, Acta Physica Polonica. A . 2008,第5期

机译：慢正电子注入光谱法探测闪光灯退火非晶硅层的结构变化
4. Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001) [C] . Tomonori Nakamura, Seiken Matsumoto, Tatsunobu Horibe, International Conference on Silicon Carbide and Related Materials 2001 Pt.2 Oct 28-Nov 2, 2001 Tsukuba, Japan . 2001

机译：6H-SiC中注入诱导非晶层的退火动力学（0001）
5. THERMAL ANNEALING BEHAVIOR OF AMORPHOUS NICKEL-NIOBIUM (METALS, THIN FILM REACTIONS, STRUCTURAL RELAXATION, STABILITY, OVERLAYERS). [D] . DOBISZ, ELIZABETH ANN. 1985

机译：非晶态镍铌合金的热退火行为（金属，薄膜反应，结构松弛，稳定性，覆盖层）。
6. TiO2 ALD Coating of Amorphous TiO2 Nanotube Layers: Inhibition of the Structural and Morphological Changes Due to Water Annealing [O] . Siowwoon Ng, Hanna Sopha, Raul Zazpe, 1970

机译：非晶态TiO2纳米管层的TiO2 ALD涂层：抑制水退火引起的结构和形态变化
7. Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy [O] . Beling CD, Wang MJ, Cheng CC, 2009

机译：正电子湮没光谱揭示了氟注入GaN层的缺陷形成和退火行为

Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire.

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