Terahertz detector utilizing two-dimensional electronic fluid

摘要

We report on the first implementation of a terahertz detector utilizing two-dimensional (2-D) electronic fluid in a high electron mobility transistor (HEMT) operating at 2.5 THz. The terahertz radiation induced a dc drain-to-source voltage proportional to the radiation intensity. The measured dependencies of the detector responsivity on the gate bias are in good agreement with the gate bias dependence of the normalized responsivity predicted by the detector theory. This result shows the potential for developing a new family of electronics devices-plasma wave electronics devices-operating at terahertz frequencies.