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Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides

机译:具有相关参数的基于细胞的超薄氧化物固有击穿分析统计模型

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The cell-based analytic statistical model, with the cell area A/sub O/ and the critical trap number per cell n/sub BD/ both as parameters, is one of the widely cited literature models in calculating the critical density of neutral electron traps that trigger the intrinsic breakdown of ultrathin oxides. This letter reports a new correlation between A/sub O/ and n/sub BD/, which can effectively reduce the cell-based model to one with the only fitting parameter n/sub BD/. Reproduction of charge-to-breakdown data has shown that (1) n/sub BD/ decreases for reduced oxide thicknesses and (2) the range of intrinsic breakdown is relatively narrowed for increasing areas. The work also addresses the ultimate thickness limit for breakdown, as set critically at n/sub BD/=1.
机译:以电池面积A / sub O /和每个电池的临界陷阱数量n / sub BD /均为参数的基于电池的分析统计模型,是计算中性电子陷阱的临界密度时被广泛引用的文献模型之一触发超薄氧化物的固有击穿。这封信报道了A / sub O /和n / sub BD /之间的新相关性,可以将基于单元的模型有效地简化为只有拟合参数n / sub BD /的模型。电荷击穿数据的再现表明,(1)n / sub BD /随着氧化物厚度的减小而减小,(2)本征击穿的范围随着面积的增加而相对变窄。这项工作还解决了击穿的最终厚度极限,该极限严格地设置为n / sub BD / = 1。

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