The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization

摘要

An asymmetric Ni-offset method was proposed to improve the electrical properties of poly-Si thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC). The MILC/MILC boundary, which was inevitably located within the channel when formed by symmetric Ni-offset, could be successfully extracted from channel region by new asymmetric Ni-offset method. Therefore, thus fabricated TFTs showed lower leakage current and better thermal stability than symmetric Ni-offset TFTs. In addition, the effects of electrical stress and temperature on the electrical properties of symmetric/asymmetric Ni-offset TFTs were investigated.