Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High-Performance Thin-Film Transistors

摘要

We report a new laser crystallization method employing double-layered amorphous-Si ( $a$-Si) thin films for solid green laser annealing (GLA) crystallization that is called GLA double-layered x'tallization (GLADLAX). Crystallization of the upper and lower $a$-Si layers of the double-layered substrate at a single laser scanning was achieved, with the upper $a$-Si becoming poly-Si with very large crystal grains and the lower $a$-Si layer becoming microcrystalline Si. Thin-film transistors using the upper layer of poly-Si that is crystallized by the method as their active channels had excellent switching performance, with their mobility exceeding 350 $hbox{cm}^{2}/hbox{V} cdot hbox{s}$, demonstrating promising applicability of GLADLAX to thin-film electronics.