Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $hbox{Sm}_{2}hbox{O}_{3}/hbox{SiO}_{2}$ Dielectric Stack

摘要

We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3/SiO2 stacked dielectrics for precision analog circuit applications. By using the ldquocanceling effectrdquo of the positive quadratic voltage coefficient of capacitance (VCC) of Sm2O3 and the negative quadratic VCC of SiO2, MIM capacitors with capacitance density exceeding 7.3 fF/mum2, quadratic VCC of around -50 ppm/V2, and leakage current density of 1 times 10-7 A/cm2 at +3.3 V are successfully demonstrated. The obtained capacitance density and quadratic VCC satisfy the technical requirements specified in the International Technology Roadmap for Semiconductors through the year 2013 for MIM capacitors to be used in precision analog circuit applications.