Improved Capacitance Density and Reliability of High-$ kappa$ $hbox{Ni}/hbox{ZrO}_{2}/hbox{TiN}$ MIM Capacitors Using Laser-Annealing Technique

摘要

We have fabricated high-$kappa hbox{Ni}/hbox{ZrO}_{2}/hbox{TiN}$ metal–insulator–metal capacitors with a very high 52-$ hbox{fF}/muhbox{m}^{2}$ capacitance density, a low leakage current of $hbox{1.6} times hbox{10}^{-7} hbox{A}/hbox{cm}^{2}$, and good ten-year reliability with a small $Delta C/C$ of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of $hbox{ZrO}_{2}$ due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced $hbox{ZrO}_{2}$ tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.