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机译:掺锰的hbox {Bi} _ {4} hbox {Ti} _ {3} hbox {O} _ {12} $在hbox {TiN} / hbox {SiO} _ {上生长的薄膜的结构和电学性质2} / hbox {Si} $射频MIM电容器基板
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea;
bismuth compounds; capacitance; current density; high-k dielectric thin films; interstitials; leakage currents; manganese; permittivity; sputter deposition; vacancies (crystal); Bi4Ti3O12:Mn; RF MIM capacitors; RF magnetron sputtering; TiN-SiO2-Si; capacitance density; dielectric constant; electrical properties; frequency 100 kHz; leakage current; oxygen interstitial ions; oxygen partial pressure; oxygen vacancies; pressure 2.8 mtorr; quadratic voltage coefficients; radio frequency metal-insulator-metal capacitors; size 39 nm; structural properties; temperature 200 degC; temperature coefficients; thin film; voltage 2 V; $hbox{Bi}_{4}hbox{Ti}_{3}hbox{O}_{12}$; high-$k$; metal–insulator–metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC);
机译:$ hbox {Bi} _ {5} hbox {Nb} _ {3} hbox {O} _ {15} $ $ hbox {TiN} / hbox {SiO} _ {2} / hbox { Si– $在室温下用于金属-绝缘体-金属电容器
机译:用于射频MIM电容器的非晶$ hbox {Bi} _ {5} hbox {Nb} _ {3} hbox {O} _ {15} $薄膜的电性能
机译:撤消“ $ hbox {Pt} / hbox {Bi} _ {{3.15} hbox {Nd} _ {0.85} hbox {Ti} _ {3} hbox {O} _ {12} / hbox {HfO}的制造和属性_ {2} / hbox {Si} $铁电DRAM(FEDRAM)FET的结构”
机译:HBOX - 连接房屋
机译:通过热壁化学气相沉积法生长的同质外延4H-碳化硅(1120)薄膜的界面上的多型稳定性,微观结构演变和杂质
机译:棘突类hbox12 / pmar1 / micro1多基因家族的时空表达和拷贝数变异的多样性
机译:$ mbox { sffamily bfseries pr} _ { hbox { sffamily bfseries fontsize {10} {12} selectfont 0.55}} mbox { sffamily bfseries(ca} _ { hbox { sffamily bfseries 字号{10} {12} selectfont 1 $ $ -y}} MBOX { sffamily bfseries锶} _ { hbox中{ sffamily bfseries 字号{10} {12} selectfont $ y $}} mbox { sffamily bfseries)} _ { hbox { sffamily bfseries fontsize {10} {12} selectfont 0.45}}}}}}}} mbox { sffamily bfseries mno} _ { hbox { sffamily bfseries fontsize {10} {12} selectfont 3}} $薄膜上佩洛夫斯基钛(011)衬底