An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

摘要

We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III–V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS $R_{rm ext}$ requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of $rho_{c} = hbox{2.7} cdot hbox{10}^{-9} Omegacdot hbox{cm}^{2}$ has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with $R_{rm sh} = hbox{97} Omega/hbox{sq}$ for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.