Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

摘要

GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on $n$-SiC substrate are investigated in this letter. These SBDs own very low onset voltage $V_{F} = hbox{0.43} hbox{V}$, high reverse blocking $V_{rm BR} > hbox{1000} hbox{V}$, very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C back-barrier epitaxial structure, fully recessed Schottky anode $(phi_{B} = hbox{0.43} hbox{eV})$, and slanted anode field plate in a robust and innovative process. Diode operation at elevated temperature up to 200 $^{circ}hbox{C}$ was also characterized.