High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

摘要

An AlGaN/GaN-on-Si lateral power diode with recessed metal/AlO/III-nitride (MIS)-gated ohmic anode for improved forward conduction and reverse blocking has been realized. The low onset voltage of V with good uniformity for the fabricated 189 devices is obtained. In comparison with the conventional Schottky diode the specific ON-resistance ( was reduced by 51% in a device with anode-to-cathode spacing ( of 5 . The incorporation of high- dielectric in the recessed gate region enabling two-order lower reverse leakage comparing with the conventional device, leading to a high breakdown voltage over 1.1 kV at leakage current as low as 10 /mm in device with . The strong reverse blocking over 600 V was still achieved at 150 °C. The proposed diode is compatible with GaN normally MIS high-electron-mobility transistors, revealing its potential for highly efficient GaN-on-Si power ICs.