首页> 外文OA文献 >Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

【2h】

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

机译：通过将边缘端子嵌入阳极区域，可降低漏电流并提高无金AlGaN / GaN-on-Si肖特基二极管的通态性能

页面导航

摘要
著录项
相似文献
相关主题

摘要

status: published

机译：状态：已发布

著录项

作者
Hu Jie; Lenci Silvia; Stoffels Steve; De Jaeger Brice; Groeseneken Guido; Decoutere Stefaan;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
专利

1. Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate [J] . Jie Hu, Steve Stoffels, Silvia Lenci, IEEE Transactions on Electron Devices . 2016,第3期

机译：200 mm硅衬底上具有门控端接的无金横向AlGaN / GaN肖特基势垒二极管的性能优化
2. Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress [J] . Tallarico Andrea Natale, Stoffels Steve, Magnone Paolo, Electron Devices, IEEE Transactions on . 2016,第2期

机译：导通应力下无金的AlGaN /硅基GaN肖特基势垒二极管的可靠性
3. Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination [J] . Jie Hu, Steve Stoffels, Silvia Lenci, IEEE Transactions on Electron Devices . 2016,第9期

机译：阳极凹槽对带门控端接的AlGaN / GaN肖特基二极管电学特性影响的统计分析
4. Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode [C] . Qinglei Bu, Yutao Cai, Miao cui, 2019 International Conference on IC Design and Technology . 2019

机译：带有和不带有嵌入式阳极的AlGaN / GaN-on-Si肖特基势垒二极管的实验比较
5. High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination [O] . Yangyang Gao, Ang Li, Qian Feng, 2019

机译：具有氩注入边缘端接的高压β-Ga2O3肖特基二极管
6. Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate [O] . Hu Jie, Stoffels Steve, Lenci Silvia, 2016

机译：200 mm硅衬底上具有门控端接的无金横向AlGaN / GaN肖特基势垒二极管的性能优化

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

摘要

著录项

相似文献

相关主题

期刊订阅