High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

摘要

In this letter, we report load pull measurements on SiGe HBTs at 94 GHz. Nowadays, this kind of device exhibits $F_{rm MAX}$ above 400 GHz and thus has a growing interest for W-band applications. A load pull test bench is developed for the characterization of this device with special care on architecture and calibration procedure for accurate measurements in 75–110 GHz. The device was characterized under large signal operation showing attractive performance for power amplifier design. A state-of-the-art power density of 18.5 $hbox{mW}/muhbox{m}^{2}$ at 1-dB compression has been obtained at 94 GHz.