SiGe BiCMOS工艺集成技术研究

摘要

SiGe（硅锗合金）BiCMOS工艺集成技术，是在制造电路结构中的双极晶体管时，在硅基区材料中加入一定含量的锗，形成应变硅异质结构晶体管，以改善双极晶体管特性的一种硅基工艺集成技术。对硅锗合金BiCMOS工艺的核心器件——锗硅异质结双极晶体管SiGe HBT的关键工艺模块，包括收集区、基区、发射区和深槽隔离的器件结构与制作工艺进行了研究与探讨。对常用的3种SiGe BiCMOS工艺集成技术BBGate工艺、BAGate工艺和BDGate工艺，进行了工艺集成技术难点与关键工艺方面的研究，并比较了各种工艺流程的优缺点及其适用范围。%SiGe HBT, the essential device of SiGe BiCMOS technology, is introduced. The process modules of the formation of Collector, Base and Emitter of the SiGe HBT are introduced. Also 3 types of process flow, BBGate, BAGate, BDGate, applied in different SiGe BiCMOS technology nodes, are discussed. The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.