Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology

摘要

Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 mum CMOS platform. The resulting SiGe:C BiCMOS technology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A high-performance variant of the bipolar transistor has been derived from the standard transistors by reduction of some transistor dimensions. With these alterations, f(T) and f(max) of the bipolar transistors reaches 120 and 140 GHz, respectively. Circuit applications of the devices are demonstrated. Static and dynamic divider circuits have a maximum input frequency of 62 and 72 GHz, respectively. Integrated LC oscillators with frequencies up to 60 GHz are also demonstrated. (C) 2003 Elsevier B.V. All rights reserved. [References: 26]