SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

摘要

Extensive work has been done on the SiGe HBTs for BiCMOS applications recently. The work on stability, reliability, simulation and material parameters is critically examined and reviewed in this part of the review. The work on the design, technology and performance of the HBTs will be discussed in part II of the review.