Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

摘要

The ballistic device performances of monolayer transition metal dichalcogenide $({rm MX}_{2})$ tunneling field-effect transistors (TFETs) and the drive current enhancement via heterojunction are investigated in this letter via the nonequilibrium Green's function formulism. The ultrathin 2-D body and the direct and designable bandgap by choosing a proper ${rm MX}_{2}$ material are advantageous for the performance of TFETs. Through introducing a common-$X$ heterojunction at the source-channel interface, the $I_{rm ON}$ at the same $I_{rm ON}/I_{rm OFF}$ ratio can be further enhanced by an order for both $n$- and $p$ -type TFETs.