Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements

摘要

We present a schematic transistor model for multifinger multifin FETs, which greatly simplifies an initially complex network. The schematic finFET model accepts various finFET layout information and is accurate in predicting the overall finFET characteristics, including the effect of parasitic resistance $(R)$ and capacitance $(C)$ in a finFET.